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Model FDG6313N_NL
Description MOSFET 25V Dual N-Ch
Product QR code
Brand: Fairchild
Packaging SC-70-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7122) Minimum order quantity(1)
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Technical parameters/number of channels: 2

Technical parameters/drain source resistance: 340 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 300 mW

Technical parameters/drain source voltage (Vds): 25 V

Technical parameters/leakage source breakdown voltage: 25 V

Technical parameters/breakdown voltage of gate source: 8.00 V

Technical parameters/Continuous drain current (Ids): 500 mA

Technical parameters/rise time: 8.5 ns

Technical parameters/descent time: 8.5 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: SC-70-6

External dimensions/length: 2 mm

External dimensions/width: 1.25 mm

External dimensions/height: 1.1 mm

External dimensions/packaging: SC-70-6

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDC6303N FDC6303N ON Semiconductor 功能相似 TSOT-23-6
FAIRCHILD SEMICONDUCTOR FDC6303N 双路场效应管, MOSFET, 双N沟道, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV
PDF
FDC6303N FDC6303N Fairchild 功能相似 TSOT-23-6
FAIRCHILD SEMICONDUCTOR FDC6303N 双路场效应管, MOSFET, 双N沟道, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV
PDF
FDG6313N FDG6313N ON Semiconductor 类似代替 SC-70-6
FDG6313N 复合场效应管 25V 500mA/0.5A SOT-363/SC70-6 marking/标记 33h
PDF

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