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Model FDC6303N
Description FAIRCHILD SEMICONDUCTOR FDC6303N Dual Field Effect Transistor, MOSFET, Dual N-channel, 680 mA, 25 V, 450 Mohm, 4.5 V, 800 mV
Product QR code
Brand: Fairchild
Packaging TSOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.32  yuan 1.32yuan
5+:
$ 1.7820
25+:
$ 1.6500
50+:
$ 1.5576
100+:
$ 1.5180
500+:
$ 1.4916
2500+:
$ 1.4586
5000+:
$ 1.4454
10000+:
$ 1.4256
Quantity
5+
25+
50+
100+
500+
Price
$1.7820
$1.6500
$1.5576
$1.5180
$1.4916
Price $ 1.7820 $ 1.6500 $ 1.5576 $ 1.5180 $ 1.4916
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5877) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 25.0 V

Technical parameters/rated current: 680 mA

Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 450 mΩ

Technical parameters/polarity: N-Channel, Dual N-Channel

Technical parameters/dissipated power: 900 mW

Technical parameters/threshold voltage: 800 mV

Technical parameters/input capacitance: 50.0 pF

Technical parameters/gate charge: 1.64 nC

Technical parameters/drain source voltage (Vds): 25 V

Technical parameters/leakage source breakdown voltage: 25.0 V

Technical parameters/breakdown voltage of gate source: 8.00 V

Technical parameters/Continuous drain current (Ids): 680 mA

Technical parameters/rise time: 8.5 ns

Technical parameters/Input capacitance (Ciss): 50pF @10V(Vds)

Technical parameters/rated power (Max): 700 mW

Technical parameters/descent time: 13 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 0.9 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: TSOT-23-6

External dimensions/length: 3 mm

External dimensions/width: 1.7 mm

External dimensions/height: 1 mm

External dimensions/packaging: TSOT-23-6

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDG6313N FDG6313N ON Semiconductor 类似代替 SC-70-6
FDG6313N 复合场效应管 25V 500mA/0.5A SOT-363/SC70-6 marking/标记 33h
PDF
FDG6313N_NL FDG6313N_NL Fairchild 功能相似 SC-70-6
MOSFET 25V Dual N-Ch
PDF

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