Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 4 Ω
Technical parameters/dissipated power: 0.3 W
Technical parameters/threshold voltage: 850 mV
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/rise time: 4.5 ns
Technical parameters/Input capacitance (Ciss): 9.5pF @10V(Vds)
Technical parameters/rated power (Max): 300 mW
Technical parameters/descent time: 3.2 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 1 mm
External dimensions/packaging: SC-70-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDG6301N_NL
|
Fairchild | 功能相似 | SC-70 |
Dual N-Channel Digital FET
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FDG6303N
|
Fairchild | 功能相似 | SC-70-6 |
FDG6303N 系列 25 V 0.45 Ohm 双 表面贴装 N 沟道 数字 FET - SC70-6
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FDG6303N
|
ON Semiconductor | 功能相似 | SOT-363-6 |
FDG6303N 系列 25 V 0.45 Ohm 双 表面贴装 N 沟道 数字 FET - SC70-6
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FDG6335N
|
ON Semiconductor | 功能相似 | SC-70-6 |
FAIRCHILD SEMICONDUCTOR FDG6335N 双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
|
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