Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/Continuous drain current (Ids): 0.22A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SC-70
External dimensions/packaging: SC-70
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDG6303N
|
Fairchild | 功能相似 | SC-70-6 |
FAIRCHILD SEMICONDUCTOR FDG6303N 双路场效应管, MOSFET, 双N沟道, 500 mA, 25 V, 0.34 ohm, 4.5 V, 800 mV
|
||
FDG6303N
|
ON Semiconductor | 功能相似 | SOT-363-6 |
FAIRCHILD SEMICONDUCTOR FDG6303N 双路场效应管, MOSFET, 双N沟道, 500 mA, 25 V, 0.34 ohm, 4.5 V, 800 mV
|
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