Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 6.5A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DPAK
External dimensions/packaging: DPAK
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 | TO-252 |
FAIRCHILD SEMICONDUCTOR FDD3672 晶体管, MOSFET, N沟道, 44 A, 100 V, 0.024 ohm, 10 V, 4 V
|
||
FDD3672
|
Fairchild | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3672 晶体管, MOSFET, N沟道, 44 A, 100 V, 0.024 ohm, 10 V, 4 V
|
||
FDD3672
|
Freescale | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3672 晶体管, MOSFET, N沟道, 44 A, 100 V, 0.024 ohm, 10 V, 4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review