Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 3.00 A
Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 70 mΩ
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 960 mW
Technical parameters/threshold voltage: 900 mV
Technical parameters/input capacitance: 324 pF
Technical parameters/gate charge: 3.30 nC
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 324pF @10V(Vds)
Technical parameters/rated power (Max): 700 mW
Technical parameters/descent time: 1.6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 0.96 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/length: 3 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1 mm
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDC6401N_NL
|
Fairchild | 功能相似 | SSOT-6 |
MOSFET Dual N-Ch 2.5V PowerTrench MOSFET
|
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