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Model FDC6401N_NL
Description MOSFET Dual N-Ch 2.5V PowerTrench MOSFET
Product QR code
Brand: Fairchild
Packaging SSOT-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8865) Minimum order quantity(1)
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Technical parameters/number of channels:

2

 

Technical parameters/drain source resistance:

70 mΩ

 

Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

960 mW

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/Leakage source breakdown voltage:

20 V

 

Technical parameters/Continuous drain current (Ids):

3A

 

Technical parameters/rise time:

7 ns

 

Technical parameters/descent time:

7 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SSOT-6

 

Dimensions/Length:

2.9 mm

 

Dimensions/Width:

1.6 mm

 

Dimensions/Height:

1.1 mm

 

Dimensions/Packaging:

SSOT-6

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDC6401N FDC6401N Rochester 功能相似 SSOT
FAIRCHILD SEMICONDUCTOR FDC6401N 双路场效应管, MOSFET, 双N沟道, 3 A, 20 V, 70 mohm, 4.5 V, 900 mV
FDC6401N FDC6401N Fairchild 功能相似 TSOT-23-6
FAIRCHILD SEMICONDUCTOR FDC6401N 双路场效应管, MOSFET, 双N沟道, 3 A, 20 V, 70 mohm, 4.5 V, 900 mV
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