Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 3A
Encapsulation parameters/Encapsulation: SuperSOT
External dimensions/packaging: SuperSOT
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Rochester | 功能相似 | SSOT |
FAIRCHILD SEMICONDUCTOR FDC5614P. 晶体管, MOSFET, P沟道, -3 A, -60 V, 105 mohm, -10 V, -1.6 V
|
||
FDC5614P
|
ON Semiconductor | 功能相似 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC5614P. 晶体管, MOSFET, P沟道, -3 A, -60 V, 105 mohm, -10 V, -1.6 V
|
||
FDC5614P_NF073
|
Fairchild | 功能相似 | SuperSOT |
60V P-Channel Logic Level PowerTrench MOSFET
|
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