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Model FDC5614P
Description PowerTrench® P Channel MOSFET, Fairchild Semiconductor PowerTrench ® MOSFET is an optimized power switch that can improve system efficiency and power density. They combine small gate charges (Qg), small reverse recovery charges (Qrr), and soft reverse recovery main diodes, which help to quickly switch synchronous rectification in AC/DC power supplies. The latest PowerTrench ® MOSFET adopts a shielded gate structure, which can provide charge balance. By utilizing this advanced technology, the FOM (quality factor) of these devices is significantly lower than the previous FOM. PowerTrench ® The soft body diode performance of MOSFETs can be achieved without the need for buffer circuits or the replacement of MOSFETs with higher rated voltages. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage（
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Brand: ON Semiconductor
Packaging TSOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.15  yuan 1.15yuan
5+:
$ 1.5552
25+:
$ 1.4400
50+:
$ 1.3594
100+:
$ 1.3248
500+:
$ 1.3018
2500+:
$ 1.2730
5000+:
$ 1.2614
10000+:
$ 1.2442
Quantity
5+
25+
50+
100+
500+
Price
$1.5552
$1.4400
$1.3594
$1.3248
$1.3018
Price $ 1.5552 $ 1.4400 $ 1.3594 $ 1.3248 $ 1.3018
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7139) Minimum order quantity(5)
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Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.105 Ω

Technical parameters/dissipated power: 1.6 W

Technical parameters/threshold voltage: 1.6 V

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/rise time: 10 ns

Technical parameters/Input capacitance (Ciss): 759pF @30V(Vds)

Technical parameters/rated power (Max): 800 mW

Technical parameters/descent time: 12 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1600 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: TSOT-23-6

External dimensions/length: 3 mm

External dimensions/width: 1.7 mm

External dimensions/height: 1 mm

External dimensions/packaging: TSOT-23-6

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Other/Manufacturing Applications: Power Management, Industrial

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDC5614P_D87Z FDC5614P_D87Z Fairchild 类似代替 TSOT-23-6
MOSFET P-CH 60V 3A 6SSOT
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