Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 1.6W (Ta)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 2.6A
Technical parameters/Input capacitance (Ciss): 660pF @50V(Vds)
Technical parameters/dissipated power (Max): 1.6W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDC3612
|
Fairchild | 类似代替 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC3612 晶体管, MOSFET, N沟道, 2.6 A, 100 V, 125 mohm, 10 V, 2.3 V
|
||
FDC3612
|
ON Semiconductor | 类似代替 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC3612 晶体管, MOSFET, N沟道, 2.6 A, 100 V, 125 mohm, 10 V, 2.3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review