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Model FDC3612
Description FAIRCHILD SEMICONDUCTOR FDC3612 晶体管, MOSFET, N沟道, 2.6 A, 100 V, 125 mohm, 10 V, 2.3 V
Product QR code
Brand: Fairchild
Packaging TSOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
5.32  yuan 5.32yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3714) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

100 V

 

Technical parameters/rated current:

2.60 A

 

Technical parameters/number of pins:

6

 

Technical parameters/drain source resistance:

125 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

1.6 W

 

Technical parameters/threshold voltage:

2.3 V

 

Technical parameters/Input capacitance:

660 pF

 

Technical parameters/gate charge:

14.0 nC

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Leakage source breakdown voltage:

100 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

2.60 A

 

Technical parameters/rise time:

3.5 ns

 

Technical parameters/Input capacitance (Ciss):

660pF @50V(Vds)

 

Technical parameters/rated power (Max):

800 mW

 

Technical parameters/descent time:

3.7 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

1.6 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

TSOT-23-6

 

Dimensions/Length:

3 mm

 

Dimensions/Width:

1.7 mm

 

Dimensions/Height:

1 mm

 

Dimensions/Packaging:

TSOT-23-6

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packa

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDC3612_F095 FDC3612_F095 Fairchild 类似代替 TSOT-23-6
MOSFET N-CH 100V 2.6A 6-SSOT
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