Technical parameters/polarity: NPN
Technical parameters/dissipated power: 830 mW
Technical parameters/gain bandwidth product: 60 MHz
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.05A
Technical parameters/minimum current amplification factor (hFE): 50 @25mA, 20V
Technical parameters/rated power (Max): 830 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 830 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 4.8 mm
External dimensions/width: 4.2 mm
External dimensions/height: 5.2 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF420,112
|
Nexperia | 类似代替 |
SPT NPN 300V 0.05A
|
|||
BF423
|
Motorola | 功能相似 |
高电压晶体管 High Voltage Transistors
|
|||
BF423
|
ON Semiconductor | 功能相似 | TO-92-3 |
高电压晶体管 High Voltage Transistors
|
||
BF423
|
General Semiconductor | 功能相似 |
高电压晶体管 High Voltage Transistors
|
|||
BF423
|
Nexperia | 功能相似 | SOT-54 |
高电压晶体管 High Voltage Transistors
|
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