Technical parameters/rated voltage (DC): -250 V
Technical parameters/rated current: -50.0 mA
Technical parameters/dissipated power: 830 mW
Technical parameters/breakdown voltage (collector emitter): 250 V
Technical parameters/minimum current amplification factor (hFE): 50 @25mA, 20V
Technical parameters/rated power (Max): 830 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF420ZL1G
|
ON Semiconductor | 功能相似 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) 500mA 300V NPN
|
||
BF421ZL1G
|
ON Semiconductor | 功能相似 | TO-226-3 |
高电压晶体管 High Voltage Transistors
|
||
BF423ZL1G
|
ON Semiconductor | 完全替代 | TO-226-3 |
ON SEMICONDUCTOR BF423ZL1G 单晶体管 双极, PNP, -250 V, 60 MHz, 830 mW, 100 mA, 50 hFE
|
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