Technical parameters/rated voltage (DC): -300 V
Technical parameters/rated current: -50.0 mA
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 50 @25mA, 20V
Technical parameters/rated power (Max): 830 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF421ZL1
|
ON Semiconductor | 类似代替 | TO-226-3 |
TO-92 PNP 300V 0.05A
|
||
BF423
|
Motorola | 功能相似 |
高电压晶体管 High Voltage Transistors
|
|||
BF423
|
ON Semiconductor | 功能相似 | TO-92-3 |
高电压晶体管 High Voltage Transistors
|
||
BF423
|
General Semiconductor | 功能相似 |
高电压晶体管 High Voltage Transistors
|
|||
BF423
|
Nexperia | 功能相似 | SOT-54 |
高电压晶体管 High Voltage Transistors
|
||
BF423ZL1G
|
ON Semiconductor | 功能相似 | TO-226-3 |
ON SEMICONDUCTOR BF423ZL1G 单晶体管 双极, PNP, -250 V, 60 MHz, 830 mW, 100 mA, 50 hFE
|
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