Technical parameters/number of pins: 6
Technical parameters/polarity: NPN, PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @5mA, 5V
Technical parameters/rated power (Max): 300 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSSOP-6
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: TSSOP-6
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Computers & Computer Peripherals, Power Management, Automation & Process Control, Automotive, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5314DW1T1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
ON SEMICONDUCTOR MUN5314DW1T1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率, SOT-363
|
||
PUMD9
|
NXP | 完全替代 | SOT-363 |
NXP PUMD9 双极晶体管阵列, BRT, NPN, PNP, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
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