Technical parameters/number of pins: | 6 |
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Technical parameters/polarity: | NPN, PNP |
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Technical parameters/dissipated power: | 200 mW |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/DC current gain (hFE): | 100 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-363 |
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Dimensions/Packaging: | SOT-363 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Cut Tape (CT) |
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Other/Manufacturing Applications: | Industrial, Power Management, Automation & Process Control, Automotive, Computers & Computer Peripherals |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5314DW1T1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
ON SEMICONDUCTOR MUN5314DW1T1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率, SOT-363
|
||
PUMD9,115
|
NXP | 完全替代 | TSSOP-6 |
NXP PUMD9,115 双极晶体管阵列, BRT, NPN, PNP, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
||
UMD9NTR
|
ROHM Semiconductor | 功能相似 | SC-70-6 |
NPN+PNP 晶体管，ROHM ### Digital Transistors, ROHM Resistor-equipped bipolar transistors, also known as Digital Transistors or Bias Resistor Transistors, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.
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