Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 10.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 39.0 W
Technical parameters/product series: IRLU120N
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 10.0 A
Technical parameters/rise time: 35.0 ns
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251
External dimensions/packaging: TO-251
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLU120NPBF
|
Infineon | 功能相似 | TO-251-3 |
INFINEON IRLU120NPBF 晶体管, MOSFET, N沟道, 10 A, 100 V, 185 mohm, 10 V, 2 V
|
||
RFD7N10LE
|
Harris | 功能相似 | TO-220-3 |
7A , 100V , 0.300 Ohm的N通道,逻辑电平功率MOSFET 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs
|
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