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Model IRLU120NPBF
Description INFINEON IRLU120NPBF 晶体管, MOSFET, N沟道, 10 A, 100 V, 185 mohm, 10 V, 2 V
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Brand: Infineon
Packaging TO-251-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
2.87  yuan 2.87yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6127) Minimum order quantity(1)
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Technical parameters/rated power:

48 W

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.185 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

48 W

 

Technical parameters/threshold voltage:

2 V

 

Technical parameters/Input capacitance:

440 pF

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Leakage source breakdown voltage:

100 V

 

Technical parameters/Continuous drain current (Ids):

10A

 

Technical parameters/rise time:

35 ns

 

Technical parameters/Input capacitance (Ciss):

440pF @25V(Vds)

 

Technical parameters/descent time:

22 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

48W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-251-3

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

2.3 mm

 

Dimensions/Height:

6.1 mm

 

Dimensions/Packaging:

TO-251-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Power Management, power management

 

Compliant with standards/RoHS stand

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Alternative material

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IRLU120N IRLU120N Infineon 功能相似 TO-251
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