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Model APTM60H23FT1G
Description Full Bridge MOSFET Power Module
Product QR code
Brand: Microsemi
Packaging SP-1
Delivery time
Packaging method Bulk
Standard packaging quantity 1
359.37  yuan 359.37yuan
1+:
$ 413.2698
10+:
$ 402.4888
50+:
$ 394.2234
100+:
$ 391.3485
200+:
$ 389.1923
500+:
$ 386.3174
1000+:
$ 384.5206
2000+:
$ 382.7237
Quantity
1+
10+
50+
100+
200+
Price
$413.2698
$402.4888
$394.2234
$391.3485
$389.1923
Price $ 413.2698 $ 402.4888 $ 394.2234 $ 391.3485 $ 389.1923
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7501) Minimum order quantity(1)
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Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 208 W

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Continuous drain current (Ids): 20A

Technical parameters/rise time: 43 ns

Technical parameters/Input capacitance (Ciss): 5316pF @25V(Vds)

Technical parameters/rated power (Max): 208 W

Technical parameters/descent time: 34 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/dissipated power (Max): 208000 mW

Encapsulation parameters/installation method: Chassis

Package parameters/number of pins: 12

Encapsulation parameters/Encapsulation: SP-1

External dimensions/packaging: SP-1

Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
APTM50H15FT1G APTM50H15FT1G Microsemi 类似代替 SP-1
全 - 桥式MOSFET功率模块 Full - Bridge MOSFET Power Module
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