Technical parameters/drain source resistance: 130 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 208 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 25A
Technical parameters/rise time: 35 ns
Technical parameters/Input capacitance (Ciss): 5448pF @25V(Vds)
Technical parameters/rated power (Max): 208 W
Technical parameters/descent time: 26 ns
Technical parameters/operating temperature (Max): 100 ℃
Technical parameters/operating temperature (Min): 40 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: SP-1
External dimensions/packaging: SP-1
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
APTM60H23FT1G
|
Microsemi | 类似代替 | SP-1 |
全 - 桥式MOSFET功率模块 Full - Bridge MOSFET Power Module
|
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