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Description Full Bridge MOSFET Power Module
Product QR code
Packaging SP-1
Delivery time
Packaging method Bulk
Standard packaging quantity 1
334.77  yuan 334.77yuan
1+:
$ 384.9798
10+:
$ 374.9368
50+:
$ 367.2372
100+:
$ 364.5591
200+:
$ 362.5505
500+:
$ 359.8724
1000+:
$ 358.1986
2000+:
$ 356.5247
Quantity
1+
10+
50+
100+
200+
Price
$384.9798
$374.9368
$367.2372
$364.5591
$362.5505
Price $ 384.9798 $ 374.9368 $ 367.2372 $ 364.5591 $ 362.5505
Start batch production 1+ 10+ 50+ 100+ 200+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(2364) Minimum order quantity(1)
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Technical parameters/drain source resistance: 130 mΩ

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 208 W

Technical parameters/threshold voltage: 3 V

Technical parameters/drain source voltage (Vds): 500 V

Technical parameters/Continuous drain current (Ids): 25A

Technical parameters/rise time: 35 ns

Technical parameters/Input capacitance (Ciss): 5448pF @25V(Vds)

Technical parameters/rated power (Max): 208 W

Technical parameters/descent time: 26 ns

Technical parameters/operating temperature (Max): 100 ℃

Technical parameters/operating temperature (Min): 40 ℃

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: SP-1

External dimensions/packaging: SP-1

Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
APTM60H23FT1G APTM60H23FT1G Microsemi 类似代替 SP-1
全 - 桥式MOSFET功率模块 Full - Bridge MOSFET Power Module
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