Technical parameters/dissipated power: 740 mW
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/rise time: 450 ns
Technical parameters/Input capacitance (Ciss): 10pF @25V(Vds)
Technical parameters/rated power (Max): 740 mW
Technical parameters/descent time: 1300 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 740mW (Ta)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.21 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LND150N3-G
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Supertex | 功能相似 | TO-226-3 |
Supertex N 通道耗尽型 MOSFET 晶体管 Microchip 的 Supertex 系列 N 通道耗尽型 DMOS FET 晶体管适用于要求高击穿电压、高输入阻抗、低输入电容和切换速度快的应用。 ### 特点 高输入阻抗 低输入电容 切换速度快 低接通电阻 无次级击穿 低输入和输出泄漏 ### 典型应用 常开开关 固态继电器 转换器 线性放大器 恒定电流源 电源电路 电信 ### MOSFET 晶体管，Microchip
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