Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 1.00 kΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 0.74 W |
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Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/Leakage source breakdown voltage: | 500 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 30.0 mA |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Width: | 4.19 mm |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bag |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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Customs information/HTS code: | 8541900000 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LND150N3-G
|
Supertex | 功能相似 | TO-226-3 |
Supertex N 通道耗尽型 MOSFET 晶体管 Microchip 的 Supertex 系列 N 通道耗尽型 DMOS FET 晶体管适用于要求高击穿电压、高输入阻抗、低输入电容和切换速度快的应用。 ### 特点 高输入阻抗 低输入电容 切换速度快 低接通电阻 无次级击穿 低输入和输出泄漏 ### 典型应用 常开开关 固态继电器 转换器 线性放大器 恒定电流源 电源电路 电信 ### MOSFET 晶体管，Microchip
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