Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 150 @1A, 2V
Technical parameters/rated power (Max): 875 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: WDFN-6
External dimensions/packaging: WDFN-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSS40200UW6T1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
40 V , 4.0 A,低VCE ( sat)的PNP晶体管 40 V, 4.0 A, Low VCE(sat) PNP Transistor
|
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