Technical parameters/frequency: 140 MHz
Technical parameters/halogen-free state: Halogen Free
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 875 mW
Technical parameters/gain bandwidth product: 140 MHz
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 150 @1A, 2V
Technical parameters/rated power (Max): 875 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 1500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2 mm
External dimensions/width: 2 mm
External dimensions/height: 0.75 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSV40200UW6T1G
|
ON Semiconductor | 功能相似 | WDFN-6 |
NSS40200UW6T1G: 低饱和压晶体管，PNP，-40 V，2.0 A
|
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