Technical parameters/drain source resistance: 7.50 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.00 W
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 230 mA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VN2222LL
|
Vishay Semiconductor | 功能相似 | TO-92 |
小信号MOSFET 150毫安, 60伏 Small Signal MOSFET 150 mAmps, 60 Volts
|
||
VN2222LL
|
Major Brands | 功能相似 | TO-92 |
小信号MOSFET 150毫安, 60伏 Small Signal MOSFET 150 mAmps, 60 Volts
|
||
|
|
Zetex | 功能相似 |
小信号MOSFET 150毫安, 60伏 Small Signal MOSFET 150 mAmps, 60 Volts
|
|||
|
|
Motorola | 功能相似 |
小信号MOSFET 150毫安, 60伏 Small Signal MOSFET 150 mAmps, 60 Volts
|
|||
VN2222LL
|
Supertex | 功能相似 | TO-92 |
小信号MOSFET 150毫安, 60伏 Small Signal MOSFET 150 mAmps, 60 Volts
|
||
VN2222LL
|
Freescale | 功能相似 |
小信号MOSFET 150毫安, 60伏 Small Signal MOSFET 150 mAmps, 60 Volts
|
|||
VN2222LL-G
|
Supertex | 功能相似 | TO-92-3 |
Supertex N 通道增强型模式 MOSFET 晶体管 Microchip Supertex 系列 N 通道增强型模式(常闭)DMOS FET 晶体管适合各种需要低阈值电压、高击穿电压、高输入阻抗,低输入电容和快速切换速度的开关和放大应用。 ### MOSFET 晶体管,Microchip
|
||
VN2222LLG
|
ON Semiconductor | 功能相似 | TO-92-3 |
ON SEMICONDUCTOR VN2222LLG 晶体管, MOSFET, N沟道, 150 mA, 60 V, 7.5 ohm, 10 V, 2.5 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review