Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 7.50 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.00 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 230 mA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/width: 4.19 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
Customs information/HTS code: 8541900000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VN2222LLG
|
ON Semiconductor | 功能相似 | TO-92-3 |
ON SEMICONDUCTOR VN2222LLG 晶体管, MOSFET, N沟道, 150 mA, 60 V, 7.5 ohm, 10 V, 2.5 V
|
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