Technical parameters/power supply voltage (DC): 3.30 V, 3.60 V (max)
Technical parameters/clock frequency: 120 GHz
Technical parameters/access time: 120 ns
Technical parameters/memory capacity: 4000000 B
Technical parameters/power supply voltage: 2.97V ~ 3.63V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 32
Encapsulation parameters/Encapsulation: DIP-32
External dimensions/packaging: DIP-32
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Dallas Semiconductor | 完全替代 | DIP |
实时时钟 4096k NV SRAM with Phantom Clock
|
||
DS1251W-120IND+
|
Maxim Integrated | 完全替代 | EDIP-32 |
实时时钟 4096k NV SRAM with Phantom Clock
|
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