Technical parameters/power supply voltage (DC): 3.30 V, 3.60 V (max)
Technical parameters/clock frequency: 120 GHz
Technical parameters/access time: 120 ns
Technical parameters/memory capacity: 4000000 B
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 2.97V ~ 3.63V
Technical parameters/power supply voltage (Max): 3.63 V
Technical parameters/power supply voltage (Min): 2.97 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 32
Encapsulation parameters/Encapsulation: EDIP-32
External dimensions/packaging: EDIP-32
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Maxim Integrated | 完全替代 | DIP-32 |
IC NVSRAM 4Mbit 120NS 32DIP
|
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