Technical parameters/power supply voltage (DC): 4.50V (min)
Technical parameters/number of pins: 28
Technical parameters/access time: 85 ns
Technical parameters/memory capacity: 32000 B
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/power supply voltage: 4.5V ~ 5.5V
Technical parameters/power supply voltage (Max): 5.5 V
Technical parameters/power supply voltage (Min): 4.5 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 28
Encapsulation parameters/Encapsulation: EDIP-28
External dimensions/length: 39.12 mm
External dimensions/width: 18.8 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: EDIP-28
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Embedded Design&Development
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1230Y-120+
|
Maxim Integrated | 类似代替 | EDIP-28 |
MAXIM INTEGRATED PRODUCTS DS1230Y-120+ 芯片, 存储器, NVRAM
|
||
|
|
Maxim Integrated | 完全替代 | EDIP-28 |
IC NVSRAM 256Kbit 85NS 28DIP
|
||
DS1230Y-85
|
Dallas Semiconductor | 完全替代 | DIP |
IC NVSRAM 256Kbit 85NS 28DIP
|
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