Technical parameters/power supply voltage (DC): 4.50V (min)
Technical parameters/memory capacity: 32000 B
Technical parameters/power supply voltage: 4.5V ~ 5.5V
Package parameters/number of pins: 28
Encapsulation parameters/Encapsulation: EDIP-28
External dimensions/packaging: EDIP-28
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube, Rail
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Dallas Semiconductor | 功能相似 | DIP |
IC NVSRAM 256Kbit 85NS 28DIP
|
||
DS1230AB-85-IND
|
Dallas Semiconductor | 功能相似 | DIP |
Non-Volatile SRAM Module, 32KX8, 85ns, CMOS, PDIP28, DIP-28
|
||
|
|
Maxim Integrated | 完全替代 | EDIP-28 |
MAXIM INTEGRATED PRODUCTS DS1230Y-85+ 芯片, 存储器, NVRAM
|
||
DS1230Y-85-IND
|
Dallas Semiconductor | 功能相似 | DIP |
Non-Volatile SRAM Module, 32KX8, 85ns, CMOS, PDIP28, DIP-28
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review