Technical parameters/power supply voltage (DC): 5.00 V, 5.50 V (max)
Technical parameters/clock frequency: 70.0 GHz
Technical parameters/access time: 70 ns
Technical parameters/memory capacity: 32000 B
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): 40 ℃
Technical parameters/power supply voltage (Max): 5.5 V
Technical parameters/power supply voltage (Min): 4.5 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 28
Encapsulation parameters/Encapsulation: EDIP-28
External dimensions/length: 39.12 mm
External dimensions/width: 18.8 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: EDIP-28
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1230AB-70IND+
|
Maxim Integrated | 类似代替 | EDIP-28 |
MAXIM INTEGRATED PRODUCTS DS1230AB-70IND+ 芯片, 存储器, NVRAM
|
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