Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.2 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @1mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 600
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-363-6
Other/Product Lifecycle: Discontinued at Digi-Key
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DDC143TU-7-F
|
Diodes | 类似代替 | SC-70-6 |
DDC143TU-7-F 编带
|
||
MUN5232DW1T1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
ON SEMICONDUCTOR MUN5232DW1T1G 晶体管 双极预偏置/数字, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SOT-363 新
|
||
MUN5233DW1T1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
ON SEMICONDUCTOR MUN5233DW1T1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率, SOT-363
|
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