Technical parameters/rated voltage (DC): | 50.0 V |
|
Technical parameters/rated current: | 100 mA |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 0.385 W |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/minimum current amplification factor (hFE): | 80 @5mA, 10V |
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Technical parameters/rated power (Max): | 250 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 385 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SC-70-6 |
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Dimensions/Packaging: | SC-70-6 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5233DW1T1
|
Motorola | 类似代替 |
双偏置电阻晶体管 Dual Bias Resistor Transistors
|
|||
PUMH13,115
|
Nexperia | 功能相似 | SC-88-6 |
NXP PUMH13,115 双极晶体管阵列, BRT, NPN, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
||
PUMH13@115
|
NXP | 类似代替 | TSSOP |
Trans Digital BJT NPN 50V 100mA 6Pin TSSOP T/R
|
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