Technical parameters/dissipated power: 0.5 W
Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 3.9 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: Mini-MELF
External dimensions/packaging: Mini-MELF
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZV55-C3V9,115
|
Nexperia | 功能相似 | SOD-80 |
NXP BZV55-C3V9,115 单管二极管 齐纳, 3.9 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C
|
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BZV55-C3V9,115
|
NXP | 功能相似 | SOD-80 |
NXP BZV55-C3V9,115 单管二极管 齐纳, 3.9 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C
|
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BZV55-C4V3,115
|
NXP | 功能相似 | SOD-80 |
500mW,BZV55 系列,NXP Semiconductors NXP 500mW 表面安装 (SMT) 齐纳二极管,具有较宽的击穿电压范围。 ### 齐纳二极管,NXP Semiconductors
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