Technical parameters/tolerances: ±5 %
Technical parameters/number of pins: 2
Technical parameters/forward voltage: 900mV @10mA
Technical parameters/dissipated power: 400 mW
Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 4.3 V
Technical parameters/forward voltage (Max): 900mV @10mA
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-80
External dimensions/length: 3.7 mm
External dimensions/width: 1.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOD-80
Physical parameters/operating temperature: -65℃ ~ 200℃
Physical parameters/temperature coefficient: -2.5 mV/℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
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BZV55-B4V3,115
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NXP | 功能相似 | Mini-MELF |
单管二极管 齐纳, 4.3 V, 400 mW, SOD-80C, 2 %, 2 引脚, 200 °C
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Nexperia | 类似代替 | Mini-MELF |
NXP BZV55-C4V3 单管二极管 齐纳, 4.3 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C
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Continental Device | 类似代替 |
NXP BZV55-C4V3 单管二极管 齐纳, 4.3 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C
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Fagor Electronica | 类似代替 | Mini-MELF |
NXP BZV55-C4V3 单管二极管 齐纳, 4.3 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C
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BZV55-C4V3,115
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NXP | 功能相似 | SOD-80 |
齐纳二极管 500mW，BZV55 系列，Nexperia NXP 500mW 表面安装 (SMT) 齐纳二极管，具有较宽的击穿电压范围。 ### 齐纳二极管，Nexperia
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