Technical parameters/tolerances: ±5 %
Technical parameters/forward voltage: 900mV @10mA
Technical parameters/dissipated power: 500 mW
Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 4.3 V
Technical parameters/forward voltage (Max): 900mV @10mA
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOD-80
External dimensions/length: 3.5 mm
External dimensions/packaging: SOD-80
Physical parameters/operating temperature: -65℃ ~ 200℃
Physical parameters/temperature coefficient: 2.5 mV/K
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZV55-B4V3,115
|
NXP | 类似代替 | Mini-MELF |
单管二极管 齐纳, 4.3 V, 400 mW, SOD-80C, 2 %, 2 引脚, 200 °C
|
||
BZV55-C4V3,115
|
NXP | 类似代替 | SOD-80 |
齐纳二极管 500mW，BZV55 系列，Nexperia NXP 500mW 表面安装 (SMT) 齐纳二极管，具有较宽的击穿电压范围。 ### 齐纳二极管，Nexperia
|
||
BZV55C4V3
|
DC Components | 类似代替 |
MULTICOMP BZV55C4V3 单管二极管 齐纳, BZT55C系列, 4.3 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C
|
|||
BZV55C4V3
|
Continental Device | 类似代替 |
MULTICOMP BZV55C4V3 单管二极管 齐纳, BZT55C系列, 4.3 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C
|
|||
BZV55C4V3
|
Multicomp | 类似代替 | SOD-80 |
MULTICOMP BZV55C4V3 单管二极管 齐纳, BZT55C系列, 4.3 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C
|
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