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Model STP4NA80
Description N - Channel Enhancement Mode Fast Power MOS Transistor
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Brand: ST Microelectronics
Packaging TO-220-3
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8903) Minimum order quantity(1)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 2.4 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 110 W

Technical parameters/drain source voltage (Vds): 800 V

Technical parameters/leakage source breakdown voltage: 800 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 4.00 A

Technical parameters/rise time: 70 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 65 ℃

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.4 mm

External dimensions/width: 4.6 mm

External dimensions/height: 9.15 mm

External dimensions/packaging: TO-220-3

Other/Product Lifecycle: Unknown

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BUZ80A BUZ80A Siemens Semiconductor 功能相似 SFM
N - CHANNEL 800V - 2.5ohm - 3.8A - TO- 220快速功率MOS晶体管 N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR
PDF
BUZ80A BUZ80A ST Microelectronics 功能相似 TO-220
N - CHANNEL 800V - 2.5ohm - 3.8A - TO- 220快速功率MOS晶体管 N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR
BUZ81 BUZ81 Siemens Semiconductor 功能相似 SFM
SIPMOS大功率晶体管（N沟道增强型雪崩额定） SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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