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Model BUZ80A
Description N - CHANNEL 800V - 2.5ohm - 3.8A - TO- 220Fast Power MOS Transistor N - CHANNEL 800V -2.5ohm -3.8A - TO-220 FAST POWER MOS TRANSISTOR
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Brand: ST Microelectronics
Packaging TO-220
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1899) Minimum order quantity(1)
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Technical parameters/rated power: 75 W

Technical parameters/drain source resistance: 2.50 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 100 W

Technical parameters/leakage source breakdown voltage: 800 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 3.80 A

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220

External dimensions/packaging: TO-220

Other/Product Lifecycle: Unknown

Compliant with standards/RoHS standards: Non-Compliant

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BUZ80 BUZ80 ST Microelectronics 功能相似 TO-220
3A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
BUZ81 BUZ81 Siemens Semiconductor 功能相似 SFM
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
PDF
STP4NA80 STP4NA80 ST Microelectronics 功能相似 TO-220-3
N - 沟道增强模式快速功率MOS晶体管 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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