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Model BUH50G
Description High voltage transistor, ON Semiconductor # # # standard manufacturer part number with S prefix has automotive qualification and complies with AEC-Q101 standard. ###Bipolar transistors, various bipolar transistors from On Semiconductor, including the following categories: small signal transistors, power transistors, dual transistors, composite transistors, high-voltage transistors, RF transistors, bipolar/FET transistors
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Brand: ON Semiconductor
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
31.15  yuan 31.15yuan
1+:
$ 38.0067
10+:
$ 35.8260
100+:
$ 34.2060
250+:
$ 33.9568
500+:
$ 33.7075
1000+:
$ 33.4272
2500+:
$ 33.1779
5000+:
$ 33.0222
Quantity
1+
10+
100+
250+
500+
Price
$38.0067
$35.8260
$34.2060
$33.9568
$33.7075
Price $ 38.0067 $ 35.8260 $ 34.2060 $ 33.9568 $ 33.7075
Start batch production 1+ 10+ 100+ 250+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2965) Minimum order quantity(1)
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Technical parameters/frequency: 4 MHz

Technical parameters/rated voltage (DC): 500 V

Technical parameters/rated current: 4.00 A

Technical parameters/polarity: NPN

Technical parameters/dissipated power: 50 W

Technical parameters/gain bandwidth product: 4 MHz

Technical parameters/breakdown voltage (collector emitter): 500 V

Technical parameters/maximum allowable collector current: 4A

Technical parameters/minimum current amplification factor (hFE): 5 @2A, 5V

Technical parameters/rated power (Max): 50 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 50 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.28 mm

External dimensions/width: 4.82 mm

External dimensions/height: 15.75 mm

External dimensions/packaging: TO-220-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BUH50 BUH50 ON Semiconductor 完全替代 TO-220-3
功率晶体管4安培800伏50瓦 POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS
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