Technical parameters/rated voltage (DC): | 500 V |
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Technical parameters/rated current: | 4.00 A |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 50 W |
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Technical parameters/breakdown voltage (collector emitter): | 500 V |
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Technical parameters/Maximum allowable collector current: | 4A |
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Technical parameters/minimum current amplification factor (hFE): | 5 @2A, 5V |
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Technical parameters/rated power (Max): | 50 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.28 mm |
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Dimensions/Width: | 4.82 mm |
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Dimensions/Height: | 9.28 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUH50G
|
ON Semiconductor | 完全替代 | TO-220-3 |
高电压晶体管，ON Semiconductor ### 标准 带 S 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
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