Technical parameters/frequency: 420 MHz
Technical parameters/polarity: NPN+PNP
Technical parameters/dissipated power: 0.3 W
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 200 @10mA, 2V
Technical parameters/rated power (Max): 300 mW
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-666
External dimensions/packaging: SOT-666
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PEMZ7,115
|
NXP | 功能相似 | SOT-666-6 |
SOT-666 NPN+PNP 12V 0.5A
|
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