Technical parameters/polarity: NPN, PNP
Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 200 @10mA, 2V
Technical parameters/rated power (Max): 300 mW
Technical parameters/DC current gain (hFE): 200
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-666-6
External dimensions/height: 0.6 mm
External dimensions/packaging: SOT-666-6
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PEMZ7
|
NXP | 功能相似 | SOT-666 |
NPN / PNP通用晶体管 NPN/PNP general purpose transistors
|
||
PEMZ7,115
|
NXP | 类似代替 | SOT-666-6 |
双极晶体管 - 双极结型晶体管(BJT) TRANS DOUBLE TAPE-7
|
||
PEMZ7,315
|
NXP | 功能相似 | SOT-666 |
SOT-666 NPN+PNP 12V 0.5A
|
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