Technical parameters/dissipated power: 80 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/minimum current amplification factor (hFE): 750 @5A, 3V
Technical parameters/rated power (Max): 80 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 80000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6042G
|
Freescale | 功能相似 | TO-220 |
ON SEMICONDUCTOR 2N6042G. 达林顿双极晶体管
|
||
BDW94C
|
ON Semiconductor | 类似代替 | TO-220-3 |
PNP 80 W 100 V 12 A 法兰安装 外延 硅 晶体管 - TO-220-3
|
||
BDW94C
|
Fairchild | 类似代替 | TO-220-3 |
PNP 80 W 100 V 12 A 法兰安装 外延 硅 晶体管 - TO-220-3
|
||
BDX34CG
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON SEMICONDUCTOR BDX34CG 单晶体管 双极, 达林顿, PNP, 100 V, 70 W, 10 A, 750 hFE
|
||
BDX54CG
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON SEMICONDUCTOR BDX54CG 单晶体管 双极, 达林顿, PNP, 100 V, 65 W, 8 A, 750 hFE
|
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