Technical parameters/rated voltage (DC): -100 V
Technical parameters/rated current: -10.0 A
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 70 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/minimum current amplification factor (hFE): 750
Technical parameters/rated power (Max): 70 W
Technical parameters/DC current gain (hFE): 750
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 70000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.28 mm
External dimensions/width: 4.82 mm
External dimensions/height: 9.28 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2016/06/20
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6042G
|
Freescale | 类似代替 | TO-220 |
ON SEMICONDUCTOR 2N6042G. 达林顿双极晶体管
|
||
BDX54CG
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON SEMICONDUCTOR BDX54CG 单晶体管 双极, 达林顿, PNP, 100 V, 65 W, 8 A, 750 hFE
|
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