Technical parameters/frequency: 250 MHz
Technical parameters/dissipated power: 0.35 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 1V
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.97 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Continental Device | 功能相似 | SOT-23 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
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BSR14
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ROHM Semiconductor | 功能相似 | SOT-23 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
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BSR14
|
Kexin | 功能相似 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
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BSR14
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
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||
MMBT2222ALT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBT2222ALT1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 600 mA, 300 hFE
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Blue Rocket Electronics | 功能相似 | SOT-23 |
Surface Mount General Purpose Si-Epi-Planar Transistors
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MMBT4401
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Diodes | 功能相似 | SOT-23 |
Surface Mount General Purpose Si-Epi-Planar Transistors
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MMBT4401
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Panjit | 功能相似 | SOT-23 |
Surface Mount General Purpose Si-Epi-Planar Transistors
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Bourns J.W. Miller | 功能相似 | SOT-23 |
Surface Mount General Purpose Si-Epi-Planar Transistors
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FMS | 功能相似 | SOT-23-3 |
Surface Mount General Purpose Si-Epi-Planar Transistors
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Taitron | 功能相似 |
Surface Mount General Purpose Si-Epi-Planar Transistors
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SLKOR. | 功能相似 | SOT-23 |
Surface Mount General Purpose Si-Epi-Planar Transistors
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MMBT4401
|
CJ | 功能相似 | SOT-23 |
Surface Mount General Purpose Si-Epi-Planar Transistors
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MMBT4401
|
Fairchild | 功能相似 | SOT-23-3 |
Surface Mount General Purpose Si-Epi-Planar Transistors
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MMBT4401
|
ChendaHang | 功能相似 | SOT-23 |
Surface Mount General Purpose Si-Epi-Planar Transistors
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GUANGDONG HOTTECH INDUSTRIAL | 功能相似 | SOT-23-3 |
Surface Mount General Purpose Si-Epi-Planar Transistors
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|
UMW | 功能相似 | SOT-23-3 |
Surface Mount General Purpose Si-Epi-Planar Transistors
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|
|
NTE Electronics | 功能相似 |
Surface Mount General Purpose Si-Epi-Planar Transistors
|
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MMBT4401
|
Micro Commercial Components | 功能相似 |
Surface Mount General Purpose Si-Epi-Planar Transistors
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Rectron Semiconductor | 功能相似 |
Surface Mount General Purpose Si-Epi-Planar Transistors
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MMBT4401LT1G
|
Fairchild | 类似代替 |
ON SEMICONDUCTOR MMBT4401LT1G 单晶体管 双极, 通用, NPN, 40 V, 250 MHz, 225 mW, 600 mA, 250 hFE
|
|||
MMBT4401LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBT4401LT1G 单晶体管 双极, 通用, NPN, 40 V, 250 MHz, 225 mW, 600 mA, 250 hFE
|
||
MMBT4401LT3G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
NPN 晶体管，最大 1A，On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
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