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Model MMBT4401LT3G
Description NPN Transistor, maximum 1A, On Semiconductor # # # Manufacturer part numbers with S or NSV prefix are automotive qualified and comply with AEC-Q101 standard. ###Bipolar transistors, various bipolar transistors from On Semiconductor, including the following categories: small signal transistors, general-purpose transistors, dual NPN and PNP transistors, power transistors, high-voltage transistors, RF bipolar transistors, low-noise, dual matched, and complex bipolar transistors
Product QR code
Brand: ON Semiconductor
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.07  yuan 0.07yuan
20+:
$ 0.0986
50+:
$ 0.0913
100+:
$ 0.0876
300+:
$ 0.0847
500+:
$ 0.0825
1000+:
$ 0.0810
5000+:
$ 0.0796
10000+:
$ 0.0781
Quantity
20+
50+
100+
300+
500+
Price
$0.0986
$0.0913
$0.0876
$0.0847
$0.0825
Price $ 0.0986 $ 0.0913 $ 0.0876 $ 0.0847 $ 0.0825
Start batch production 20+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3127) Minimum order quantity(20)
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Technical parameters/frequency: 250 MHz

Technical parameters/rated voltage (DC): 40.0 V

Technical parameters/rated current: 600 mA

Technical parameters/rated power: 300 mW

Technical parameters/number of pins: 3

Technical parameters/polarity: NPN

Technical parameters/dissipated power: 225 mW

Technical parameters/breakdown voltage (collector emitter): 40 V

Technical parameters/maximum allowable collector current: 0.6A

Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 1V

Technical parameters/rated power (Max): 300 mW

Technical parameters/DC current gain (hFE): 20

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 300 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23-3

External dimensions/length: 3.04 mm

External dimensions/width: 2.64 mm

External dimensions/height: 0.94 mm

External dimensions/packaging: SOT-23-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Other/Manufacturing Applications: Industrial, Automotive, Power Management, Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MMBT4401LT1 MMBT4401LT1 Motorola 类似代替 CASE 318-08
MMBT4401LT1 NPN三极管 60V 600mA/0.6a 250Mhz 20~300 400mV~750mV SOT-23/SC-59 marking/标记 2X
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MMBT4401LT1 MMBT4401LT1 Leshan Radio 类似代替
MMBT4401LT1 NPN三极管 60V 600mA/0.6a 250Mhz 20~300 400mV~750mV SOT-23/SC-59 marking/标记 2X
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MMBT4401LT1 MMBT4401LT1 ON Semiconductor 类似代替 SOT-23-3
MMBT4401LT1 NPN三极管 60V 600mA/0.6a 250Mhz 20~300 400mV~750mV SOT-23/SC-59 marking/标记 2X
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MMBT4401LT1G MMBT4401LT1G Fairchild 类似代替
ON SEMICONDUCTOR MMBT4401LT1G 单晶体管 双极, 通用, NPN, 40 V, 250 MHz, 225 mW, 600 mA, 250 hFE
MMBT4401LT1G MMBT4401LT1G ON Semiconductor 类似代替 SOT-23-3
ON SEMICONDUCTOR MMBT4401LT1G 单晶体管 双极, 通用, NPN, 40 V, 250 MHz, 225 mW, 600 mA, 250 hFE
PDF

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