Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/rated power: 0.15 W
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 150 mW
Technical parameters/collector breakdown voltage: 50.0 V
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @1mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 600
Technical parameters/rated power (Max): 150 mW
Technical parameters/DC current gain (hFE): 250
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/width: 1.25 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SC-70-6
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DDC143TU-7
|
Diodes | 功能相似 | SOT-363-6 |
Trans Digital BJT NPN 50V 100mA 200mW Automotive 6Pin SOT-363 T/R
|
||
UMH3NFHATN
|
ROHM Semiconductor | 功能相似 | SOT-363-6 |
ROHM UMH3NFHATN 晶体管 双极预偏置/数字, 双路NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SOT-353 新
|
||
UMH3NTR
|
ROHM Semiconductor | 类似代替 | UMT |
UMT NPN 50V 100mA
|
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