Technical parameters/number of pins: 2
Technical parameters/forward voltage: 1V @100mA
Technical parameters/thermal resistance: 350℃/W (RθJA)
Technical parameters/reverse recovery time: 4 ns
Technical parameters/forward current: 200 mA
Technical parameters/Maximum forward surge current (Ifsm): 4 A
Technical parameters/forward voltage (Max): 1 V
Technical parameters/forward current (Max): 200 mA
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/operating temperature: 200℃ (Max)
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-80
External dimensions/length: 3.7 mm
External dimensions/width: 1.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOD-80
Physical parameters/operating temperature: -65℃ ~ 200℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAS32L
|
NXP | 完全替代 | Mini-MELF |
小信号开关二极管，Nexperia ### 特点 支持自定义高密度电路设计 提供低泄漏和高电压类型 高切换速度 低电容
|
||
BAS32L,115
|
Nexperia | 类似代替 | SOD-80 |
NXP BAS32L,115 二极管 小信号, 单, 100 V, 200 mA, 1 V, 4 ns, 4 A
|
||
BAS32L,135
|
NXP | 完全替代 | Mini-MELF |
DIODE GEN PURP 75V 200mA SOD80
|
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