Technical parameters/forward voltage: | 1V @100mA |
|
Technical parameters/reverse recovery time: | 4 ns |
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Technical parameters/forward current: | 200 mA |
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Technical parameters/forward voltage (Max): | 1V @100mA |
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Technical parameters/forward current (Max): | 200 mA |
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Technical parameters/operating temperature: | 200℃ (Max) |
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Technical parameters/dissipated power (Max): | 500 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | Mini-MELF |
|
Dimensions/Width: | 1.6 mm |
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Dimensions/Packaging: | Mini-MELF |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAS32L,115
|
Nexperia | 功能相似 | SOD-80 |
NXP BAS32L,115 二极管 小信号, 单, 100 V, 200 mA, 1 V, 4 ns, 4 A
|
||
BAS32L,135
|
NXP | 类似代替 | Mini-MELF |
DIODE GEN PURP 75V 200mA SOD80
|
||
BAS32LT/R
|
NXP | 完全替代 |
DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
|
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