Technical parameters/power supply voltage (DC): 1.80 V, 1.90 V (max)
Technical parameters/clock frequency: 200MHz (max)
Technical parameters/digits: 36
Technical parameters/access time: 200 µs
Technical parameters/memory capacity: 18000000 B
Technical parameters/access time (Max): 0.45 ns
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/power supply voltage: 1.7V ~ 1.9V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 165
Encapsulation parameters/Encapsulation: FBGA-165
External dimensions/packaging: FBGA-165
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CY7C1315BV18-200BZC
|
Cypress Semiconductor | 完全替代 | FBGA-165 |
18 - Mbit的QDR ™-II SRAM 4字突发架构 18-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
|
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